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| HMC341 v01.1007 GaAs MMIC LOW NOISE AMPLIFIER, 24 - 30 GHz 1 LOW NOISE AMPLIFIERS - CHIP Typical Applications The HMC341 is ideal for: * Millimeterwave Point-to-Point Radios * LMDS * VSAT & SATCOM Features Excellent Noise Figure: 2.5 dB Gain: 13 dB Single Supply: +3V @ 30 mA Small Size: 1.42 x 1.06 x 0.1 mm Functional Diagram General Description The HMC341 chip is a GaAs MMIC Low Noise Amplifier (LNA) which covers the frequency range of 24 to 30 GHz. The chip can easily be integrated into Multi-Chip Modules (MCMs) due to its small (1.51 mm2) size. The chip utilizes a GaAs PHEMT process offering 13 dB gain from a single bias supply of + 3V @ 30 mA with a noise figure of 2.5 dB. All data is with the chip in a 50 ohm test fixture connected via 0.025 mm (1 mil) diameter wire bonds of minimal length 0.31 mm (<12 mils). Electrical Specifi cations, TA = +25 C, Vdd = +3V Parameter Frequency Range Gain Gain Variation Over Temperature Noise Figure Input Return Loss Output Return Loss Reverse Isolation Output Power for 1dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Supply Current (Idd) 26 - 30 GHz 24 - 26 GHz 9 9 25 2 6 12 10 Min. Typ. 24 - 30 13 0.03 2.5 2.9 13 13 30 6 10 16 30 40 16 0.04 3.5 3.9 Max. Units GHz dB dB/C dB dB dB dB dB dBm dBm dBm mA 1-8 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC341 v01.1007 GaAs MMIC LOW NOISE AMPLIFIER, 24 - 30 GHz Gain vs. Temperature @ Vdd = +3V 20 Gain vs. Temperature @ Vdd = +5V 20 1 LOW NOISE AMPLIFIERS - CHIP 1-9 15 GAIN (dB) GAIN (dB) +25C -55C +85C 15 10 10 5 5 +25C -55C +85C 0 22 24 26 28 30 32 FREQUENCY (GHz) 0 22 24 26 28 30 32 FREQUENCY (GHz) Return Loss @ Vdd = +3V 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 -35 22 24 26 28 30 32 FREQUENCY (GHz) S11 S22 Return Loss @ Vdd = +5V 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 -35 22 24 26 28 30 32 FREQUENCY (GHz) S11 S22 Noise Figure vs. Temperature @ Vdd = +3V 7 6 NOISE FIGURE (dB) 5 4 3 2 1 0 22 24 26 28 30 32 FREQUENCY (GHz) +25C -55C +85C Noise Figure vs. Temperature @ Vdd = +5V 7 6 NOISE FIGURE (dB) 5 4 3 2 1 0 22 24 26 28 30 32 FREQUENCY (GHz) +25C -55C +85C For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC341 v01.1007 GaAs MMIC LOW NOISE AMPLIFIER, 24 - 30 GHz 1 LOW NOISE AMPLIFIERS - CHIP Gain & Noise Figure vs. Supply Voltage @ 28 GHz 13.6 13.4 13.2 GAIN dB) 13 12.8 12.6 12.4 12.2 12 2.5 3 3.5 4 4.5 5 3.8 3.6 3.4 NOISE FIGURE (dB) 3.2 3 2.8 2.6 2.4 2.2 5.5 Isolation 0 -10 -20 -30 -40 -50 -60 -70 22 24 26 28 30 32 FREQUENCY (GHz) Vdd = +3V Vdd = +5V Vdd SUPPLY VOLTAGE (Vdc) Output P1dB @ Vdd = +3V 16 14 12 P1dB (dBm) 10 8 6 4 2 0 22 24 26 28 30 32 FREQUENCY (GHz) +25 C -55 C +85 C Output P1dB @ Vdd = +5V 16 14 12 P1dB (dBm) 10 8 6 4 2 0 22 24 26 28 30 32 FREQUENCY (GHz) +25 C -55 C +85 C Output IP3 @ Vdd = +3V 25 Output IP3 @ Vdd = +5V 25 20 ISOLATION (dB) IP3 (dBm) 20 IP3 (dBm) 15 +25 C -55 C +85 C 15 +25 C -55 C +85 C 10 10 5 5 0 22 24 26 28 30 32 FREQUENCY (GHz) 0 22 24 26 28 30 32 FREQUENCY (GHz) 1 - 10 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC341 v01.1007 GaAs MMIC LOW NOISE AMPLIFIER, 24 - 30 GHz Absolute Maximum Ratings Drain Bias Voltage (Vdd) RF Input Power (RFIN)(Vdd = +3.0 Vdc) Channel Temperature Continuous Pdiss (T = 85 C) (derate 3.44 mW/C above 85 C) Thermal Resistance (channel to die bottom) Storage Temperature Operating Temperature +5.5 Vdc +3 dBm 175 C 0.310 W 290 C/W -65 to +150 C -55 to +85 C 1 LOW NOISE AMPLIFIERS - CHIP NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004" 3. TYPICAL BOND IS .004" SQUARE 4. BACKSIDE METALLIZATION: GOLD 5. BOND PAD METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing Die Packaging Information [1] Standard GP-2 Alternate [2] [1] Refer to the "Packaging Information" section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 1 - 11 HMC341 v01.1007 GaAs MMIC LOW NOISE AMPLIFIER, 24 - 30 GHz 1 LOW NOISE AMPLIFIERS - CHIP Pad Descriptions Pad Number 1 Function RFIN Description This pad is AC coupled and matched to 50 Ohms. Interface Schematic 2 RFOUT This pad is AC coupled and matched to 50 Ohms. 3 Vdd Power Supply for the 2-stage amplifier. An external RF bypass capacitor of 100 - 300 pF is required. The bond length to the capacitor should be as short as possible. The ground side of the capacitor should be connected to the housing ground. Assembly Diagrams 1 - 12 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC341 v01.1007 GaAs MMIC LOW NOISE AMPLIFIER, 24 - 30 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). An RF bypass capacitor should be used on the Vdd input. A 100 pF single layer capacitor (mounted eutectically or by conductive epoxy) placed no further than 0.762mm (30 Mils) from the chip is recommended. 0.102mm (0.004") Thick GaAs MMIC Wire Bond 0.076mm (0.003") 1 LOW NOISE AMPLIFIERS - CHIP 1 - 13 RF Ground Plane 0.127mm (0.005") Thick Alumina Thin Film Substrate Figure 1. 0.102mm (0.004") Thick GaAs MMIC Wire Bond 0.076mm (0.003") Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: strikes. Follow ESD precautions to protect against ESD RF Ground Plane 0.150mm (0.005") Thick Moly Tab 0.254mm (0.010") Thick Alumina Thin Film Substrate Figure 2. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a tool temperature of 265 deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 deg. C. DO NOT expose the chip to a temperature greater than 320 deg. C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule. Wire Bonding Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31 mm (12 mils). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com |
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